Multi-Year Investment to Boost Silicon Carbide Manufacturing
US semiconductor manufacturing firm onsemi has announced plans to develop a silicon carbide (SiC) manufacturing facility in the Czech Republic, part of a multi-year investment totaling up to $2 billion. This expansion will enhance the company’s existing operations in the country, producing intelligent power semiconductors aimed at improving energy efficiency in electric vehicles, renewable energy, and AI data centers.
Hassane El-Khoury, President and CEO of onsemi, emphasized the strategic importance of the site, noting that it will create a central European supply chain to meet the growing demand for energy-efficient technologies. “Through close collaboration with the Czech government, this expansion will significantly boost our production capabilities, aiding the European Union’s goals to reduce carbon emissions and environmental impact,” he stated.
Collaborative Efforts and Economic Impact
onsemi is working with the Czech government to prepare an incentive package to support this substantial investment. Currently, onsemi processes over three million wafers annually in the Czech Republic, including more than one billion power devices. Upon final regulatory and incentive approvals, this project would rank among the largest private sector investments in the country’s history.
Jozef Síkela, Minister of Industry and Trade of the Czech Republic, welcomed the announcement, highlighting it as a testament to the country’s appeal to foreign investors. “This investment strengthens our position in the semiconductor industry and supports the automotive sector’s shift towards electromobility,” Síkela remarked.
Advancing Silicon Carbide Technology
Silicon carbide, crucial for high-power, high-temperature applications, is notoriously difficult to produce. onsemi is among the few companies globally capable of manufacturing SiC-based semiconductors from crystal growth to advanced packaging solutions. The production process involves several industrial gases, each playing a vital role in the manufacturing and processing of silicon carbide semiconductors.
